inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK2019-01 description drain current C i d = 3.5a@ t c =25 drain source voltage- : v dss = 500v(min) fast switching speed applications switching regulators ups dc-dc converters general purpose power amplifier absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 3.5 a i d(puls) pulsed drain current 14 a p tot total dissipation@tc=25 40 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3.125 /w r th j-a thermal resistance, junction to ambient 75 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK2019-01 electrical characteristics (t c =25 ) symbol parameter conditions min type max uni t v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 500 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 2.5 3.0 3.5 v v sd diode forward on-voltage i s = 3.5a ;v gs = 0 1.1 1.65 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 1.5a 2.0 3.0 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 500v; v gs = 0 500 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 600 900 pf c rss reverse transfer capacitance 10 15 c oss output capacitance 50 75 t r rise time v gs =10v; i d =3.5a; v dd =300v; r l =10 10 15 ns t d(on) turn-on delay time 15 25 t f fall time 15 25 t d(off) turn-off delay time 40 60 pdf pdffactory pro www.fineprint.cn
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